MANUFACTURING METHOD OF X-RAY MASK AND SEMICONDUCTOR DEVICE USING X-RAY MASK MANUFACTURED BY THE SAME

Title:

MANUFACTURING METHOD OF X-RAY MASK AND SEMICONDUCTOR DEVICE USING X-RAY MASK MANUFACTURED BY THE SAME

Document Type and Number:

Japanese Patent JP2004273794

Kind Code:

A

Abstract:

To provide a manufacturing method of an X-ray mask, which can improve resolution of the pattern of a semiconductor device.

In the manufacturing process of the X-ray mask, chromium oxide 12 as an etching stopper is formed on a diamond 11 of an X-ray transparent body. Diamonds 13 as X-ray absorbing bodies in the first layer are formed on chromium oxide 12. Tungsten 14 as X-ray absorbing bodies on the second layer are formed on the diamonds 13. Consequently, the X-ray absorbing body of a laminated structure is formed by the diamonds 13 and tungsten 14. When the X-ray absorbing body is made in the laminated structure including materials of different compositions, a transmission factor and phase shift quantity of the X-ray absorbing body can easily be adjusted.

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Inventors:

WATANABE HIROSHI
KICHISE KOJI
ITOGA KENJI

Application Number:

JP2003062939A

Publication Date:

September 30, 2004

Filing Date:

March 10, 2003

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP

International Classes:

C23C16/00; C23C16/26; G03F1/22; G03F1/54; G03F7/00; G03F9/00; G21K5/00; H01L21/027; (IPC1-7): H01L21/027; G03F1/08; G03F1/16

Domestic Patent References:

JPH05315230A	1993-11-26
JPS6240726A	1987-02-21
JP2000156343A	2000-06-06
JPH1126354A	1999-01-29
JPH04136854A	1992-05-11
JPH0864524A	1996-03-08
JPH0992599A	1997-04-04
JPS62291116A	1987-12-17
JPH0943829A	1997-02-14
JPH09190963A	1997-07-22

Other References:

KIYOSHI FUJII, ET.AL.: "Optimum Phase Condition for Low-Contrast X-Ray Masks", JPN.J.APPL.PHYS., vol. Vol.38, Part1, No.12B, JPN7008008203, December 1999 (1999-12-01), pages 7076 - 7079, ISSN: 0001179517

Attorney, Agent or Firm:

Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai

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