To solve a problem that, when a high voltage is used at a charge detecting section, since an MOS (metal oxide semiconductor) transistor having a high breakdown voltage must be used in the post-stage, it is disadvantageous for making a peripheral circuit fine in structure, high in operation speed and low in power consumption.
When a horizontal CCD (charge-coupled device) 14 is manufactured in a CCD imaging device of a horizontal CCD structure, a transfer channel is formed such that the potential becomes shallower gradually toward the output side at least at the output part, preferably a transfer part on the outside of the region of a pixel part 11, thus setting a shallow potential at the FD (floating diffusion) part of a charge detecting section 15. Consequently, voltage reduction can be realized at the charge detecting section 15 while ensuring sufficient characteristics at the FD part.
HIROTA ISAO
NOGUCHI KATSUNORI
TOYAMA TAKAYUKI
YAMAGISHI KATSUMI
