Title:
マスクブランク、マスクブランクの製造方法、および転写用マスクの製造方法
Document Type and Number:
Japanese Patent JP6991012
Kind Code:
B2
Abstract:
To provide a mask blank in which suppression of pattern collapse of a resist pattern is easily evaluated without performing an actual lithographic process.SOLUTION: The mask blank includes such a structure that a thin film for pattern formation and a negative resist film are stacked in this order on a main surface of a substrate, in which the thin film for pattern formation is formed of a material containing at least one element selected from metals and silicon and the negative resist film is formed of an organic material and formed in contact with the surface of the thin film for pattern formation. When the negative resist film is removed by dissolving with a developer, a falling speed of the surface of the thin film for pattern formation is less than 9 mm/sec.SELECTED DRAWING: Figure 1
Inventors:
Toru Fukui
Ono Ichiho
Masahiro Hashimoto
Ono Ichiho
Masahiro Hashimoto
Application Number:
JP2017163981A
Publication Date:
January 12, 2022
Filing Date:
August 29, 2017
Export Citation:
Assignee:
HOYA CORPORATION
International Classes:
G03F1/68; G03F1/24; G03F1/32; G03F1/54; G03F7/004; G03F7/038; G03F7/11; G03F7/20; G03F7/32; H01L21/027
Domestic Patent References:
| JP2008070268A | ||||
| JP2012237975A | ||||
| JP2016040589A |
Attorney, Agent or Firm:
Shinto International Patent Office