To provide a mask for improving aligning accuracy of patters in mix-and-match exposure using different exposure methods, and a method for manufacturing the mask, to provide a photomask and its manufacturing method and an exposure method.

Positional distortion, exceeding the correcting amount by deflection in the position distortions of a stencil mask, is extracted (step ST24), and a photomask having the pattern position in matching with the extracted position distortion is produced (step ST26) so as to eliminate the positional distortion which exceeds the correcting amount in the mask pattern of the stencil mask. The residual position distortion of the stencil mask corrected by sub-deflection during the mask is exposed to an electron beam in the mix-and-match exposure. Thus, the exposure pattern, formed by exposure to light by using the photomask, can be aligned to the exposure pattern formed by exposure to the electron beam by using the stencil mask.