Title:
MASK SUBSTRATE FOR X-RAY EXPOSURE
Document Type and Number:
Japanese Patent JPS6278819
Kind Code:
A
Abstract:
PURPOSE: To stabilize the characteristics of tensile force, X-ray transmittance and the like of an X-ray exposing mask substrate as well as to reduce the percentage of rejects of the titled substrate by a method wherein an Si thin plate is mainly composed of BN, and is coated with a material containing Si3N4 os 1W20wt%.
CONSTITUTION: A mask substrate 3 is formed by applying an X-ray transmitting film 2, having BN as the main component and containing Si3N4 of 1W20wt%, on an Si thin plate 1 by performing a chemical vapor deposition (CVD) method. As a result, the characteristics of the tensile force, the X-ray transmittance and the like of the substrate 3 can be stabilized, and the percentage of rejects can also be reduced.
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Inventors:
KAWAI TETSUO
SAWADA RYOZO
SAWADA RYOZO
Application Number:
JP21622785A
Publication Date:
April 11, 1987
Filing Date:
October 01, 1985
Export Citation:
Assignee:
HITACHI METALS LTD
International Classes:
G03F1/00; G03F1/22; H01L21/027; H01L21/30; (IPC1-7): G03F1/00; H01L21/30
Attorney, Agent or Firm:
Katsuji Maki