Title:
MATERIAL STRUCTURE AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2022016038
Kind Code:
A
Abstract:
To provide a material structure capable of utilizing some atom layers formed on a silicon carbide (SiC) single crystal, and a semiconductor device.SOLUTION: A material structure provided on a silicon carbide (SiC) substrate layer 1 includes a nitrogen (N)-containing two-dimensional material layer 2. The two-dimensional material layer 2 is formed of silicon and nitrogen, and the outermost surface is bonded by hydrogen atoms; the two-dimensional periodic structure of the two-dimensional material layer 2 is (√3x√3R30) to the substrate layer; the thickness of the two-dimensional material layer 2 is 0.2-0.8 nm; the nitrogen area density of the two-dimensional material layer 2 is 1×1014 cm-2 to 2x1015 cm-2; and in the initial state of the two-dimensional material layer 2, the outermost surface is bonded by hydrogen atoms having an area density of 5x1014 cm-2 or more. A semiconductor device including the material structure and two or more electrodes on the surface of the two-dimensional material layer 2 is formed on a substrate having a resistivity of 1x105 Ωcm or more.SELECTED DRAWING: Figure 3
Inventors:
TSUCHIDA SHUICHI
MURATA KOICHI
MORI DAISUKE
TAKIGAWA AKI
MURATA KOICHI
MORI DAISUKE
TAKIGAWA AKI
Application Number:
JP2020119297A
Publication Date:
January 21, 2022
Filing Date:
July 10, 2020
Export Citation:
Assignee:
CENTRAL RES INST ELECTRIC POWER IND
FUJI ELECTRIC CO LTD
FUJI ELECTRIC CO LTD
International Classes:
B32B18/00; C30B29/38; C01B21/068; C30B29/36; H01L21/336; H01L21/338; H01L29/26; H01L29/786; H01L29/861
Attorney, Agent or Firm:
Hiroyuki Kurihara