To provide a memory structure in which electric characteristics are controlled by indirectly heating a phase change material.
A manufacturing method of a memory device of a phase change material and a phase change memory device prepared by the method thereof are included. Concretely, the phase change memory device contains a semiconductor structure, and the semiconductor structure includes a substrate where a first doped area is contained and a set of second doped areas are disposed at both ends thereof; the phase change material disposed on the first doped area; and a conductor disposed on the phase change material. The semiconductor structure is operated as a bipolar junction transistor when the phase change material is in a first phase, and the semiconductor structure is operated as a MOSFET when the phase change material is in a second phase.
HENDRICK HAMANN
JOHNSON JEFFREY B
LAM CHUNG H
HON-SUM P WONG
Yoshihiro City
Takeshi Ueno