Title:
METAL COMPLEX, METAL COMPLEX SOLUTION, THIN FILM AND METHOD FOR PRODUCING THE SAME, ELECTRONIC ELEMENT, THIN FILM TRANSISTOR, DISPLAY DEVICE, IMAGE SENSOR, AND X RAY SENSOR
Document Type and Number:
Japanese Patent JP2015140332
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a metal complex, a metal complex solution, a method for producing a thin film, a thin film, an electronic element, a thin film transistor, a display device, an image sensor, and an x ray sensor, which enable easy preparation of a thin film containing at least one of a metal oxide and a metal sulfide and can reduce the generation of nitrogen oxides (NO) when preparing the thin film.SOLUTION: Provided is a metal complex represented by the general formula (1) [M: In and Ga; (L-R): a d-valent anionic ligand; L: a neutral ligand; a and c: an integer of 1 to 3; d: 1 or 2; e: an integer of 0 to 3; 3×a=c×d; L: a d-valent anionic site; and R: an alkyl group having 1 to 20 alkyl group, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, and a heteroaryl group having 3 to 20 carbon atoms, each having a substituent which exhibits nucleophilicity].
Inventors:
HAMAZAKI AKIRA
NOMURA KIMIATSU
TAKADA MASAHIRO
NOMURA KIMIATSU
TAKADA MASAHIRO
Application Number:
JP2014015460A
Publication Date:
August 03, 2015
Filing Date:
January 30, 2014
Export Citation:
Assignee:
FUJIFILM CORP
International Classes:
C07C59/01; C07C59/42; C07C65/21; C07C229/76; C07C271/22; C07D333/38; G02F1/1368; H01L21/368; H01L27/144; H01L27/146; H01L29/786; H01L51/05; H01L51/30; H01L51/50
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Hiroshi Fukuda
Kato Kazunori
Hiroshi Fukuda