Title:
METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3723159
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent the occurrence of the corrosion of a metallic film formed on a semiconductor device substrate, and to eliminate the occurrence of defects in the production of a semiconductor device.
SOLUTION: The method comprises a stage where, when a metallic film to form into a wiring material is formed on a semiconductor device substrate 6, the semiconductor device substrate 6 is dipped into a plating tank 1 in which deposition metal is melted, and the metallic film is formed by an electroplating method; and a stage where the semiconductor device substrate 6 with the metallic film formed is cleaned with pure water, and is further dried. The partial pressure of oxygen in an atmosphere to which the semiconductor device substrate 6 is exposed from the completion of the stage where the metallic film is formed to the completion of the stage where the semiconductor device substrate 6 is dried is controlled to ≤50 Pa. Thus, the semiconductor device substrate 6 can be treated in the atmosphere having a low oxygen concentration in the meanwhile from its taking-up from the plating tank 1 till the completion of the cleaning/drying. Thus, the surface oxidation of the semiconductor device substrate 6 is suppressed, so that the occurrence of the corrosion can be prevented.
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Inventors:
Tatsuaki Nagaya
Application Number:
JP2002219369A
Publication Date:
December 07, 2005
Filing Date:
July 29, 2002
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
C25D7/12; C25D5/48; (IPC1-7): C25D7/12; C25D5/48
Domestic Patent References:
| JP2001326227A | ||||
| JP2236296A |
Foreign References:
| WO2001099168A1 |
Attorney, Agent or Firm:
Akio Miyai