PURPOSE: To eliminate or reduce displacement of a X-ray mask pattern to enable X-ray lithography to be performed with high precision, by locally radiating charged particle beams such as focusing ion beams on a X-ray transmitting thin film strained with a pattern whose displacement needs to be corrected, and locally expanding/shrinking the thin film.

CONSTITUTION: A Si3N4 film 2 is applied on a silicon wafer 1 by a LPCVD method. the back plane of the Si wafer 1 is removed by 50 mm by chemical etching to manufacture a X-ray transmitting mask, with the mask having tensile displacement component from a normal position, wholly ranging from the center to the periphery of the wafer 1. B+ ions are implanted the circular part Q of Si3N4 surrounding the pattern, against uniform tensile displacement in the peripheral direction. This ion implantation on the peripheral circular part eliminates wholly tensile displacement to the periphery.