PURPOSE: To obtain a uniform, high-precision pattern by supplying a developer in a vapor state in the process of forming a fine pattern on a silicon substrate.
CONSTITUTION: In a developing tank 11, a holding base 12 for holding a substrate 4 made of a silicon wafer upside down from above is provided. A device 14 for vaporizing a developer 15 is also provided in the developing tank 11. This developer 15 reacts chemically with exposed parts and unexposed parts of a photosensitive material on the substrate 15, and this developer 15 is vaporized by the device 14 to fill the developing tank 11. In this state, the substrate 4 held by the holding base 12 is treated by, for example, the cooling of a temperature regulator 19, and consequently the vapor of the developer 15 in the tank 11 is condensed to stick to the surface (reverse surface) of the substrate 4, covering the substrate surface uniformly. Consequently, the condensed developer 15 reacts chemically with a thin film of the photosensitive material on the substrate 4, thus developing a desired pattern.
KADOTA KAZUYA
NAKAZAWA TOMIO
NAGAO MAKI
TAGI YOUICHI
HITACHI MICROCUMPUTER ENG
| JPS5067577A | 1975-06-06 |