To detect a final point highly accurately and to improve flatness of CMP process by carrying out highly accurate film thickness measurement by specifying a measurement position in-situ measurement during CMP process.
A layer structure of a sample is obtained from frequency spectral intensity to dispersion waveform of reflection light from a sample in CMP process and a measurement position of a sample is specified. Furthermore, a threshold value is decided from reflectance of a pattern itself to a dispersion waveform of reflection light from a sample and it is specified that a detection position is a large area part of a pattern by the threshold value. It is possible to obtain film thickness distribution, to realize highly accurate film thickness control and to detect a final point highly accurately by measuring a film thickness by specifying a measurement position.
NOMOTO MINEO
HIROSE TAKESHI
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