Title:
METHOD AND DEVICE FOR FORMING TRANSPARENT ELECTRODE THIN FILM
Document Type and Number:
Japanese Patent JP3846633
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a forming method and a device of a transparent electrode thin film by which the resistivity of the transparent electrode is reduced, the quality and the productivity of the film is improved by uniformizing the heating temperature of a substrate and shortening a heating time.
SOLUTION: A device for forming the transparent electrode thin film formed by sputtering or vapor deposition is provided with a generating source a3 of particles such as a sputtering target or a vapor depositing source opposite to a substrate a1 in a vacuum vessel a2, and heaters (h2s and h1) as heating means of the substrates on the both sides of a film forming surface side and a non-film forming surface side by sandwiching the substrate. The substrate is heated up to a prescribed temperature from the both sides of the film forming surface side and the non-film forming surface side of the substrate to form the film.
Inventors:
Shin Shimozawa
Shinji Fujikake
Shinji Fujikake
Application Number:
JP2003038503A
Publication Date:
November 15, 2006
Filing Date:
February 17, 2003
Export Citation:
Assignee:
Fuji Electric Holdings Co., Ltd.
International Classes:
C23C14/24; H01L21/285; C23C14/34; (IPC1-7): H01L21/285; C23C14/24; C23C14/34
Domestic Patent References:
| JP2002164553A |
Attorney, Agent or Firm:
Iwao Yamaguchi
Yoshihide Komada
Kiyoshi Matsuzaki
Yoshihide Komada
Kiyoshi Matsuzaki