Title:
METHOD FOR DOPANT IMPLANTATION OF FINFET STRUCTURES
Document Type and Number:
Japanese Patent JP2015065412
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for implanting dopant elements in a structure comprising a plurality of semiconductor fins separated by field dielectric areas.SOLUTION: The method includes the steps of: depositing a BARC layer 4 on fins; depositing a resist layer 5 on the BARC layer; removing a portion of the resist layer by lithography steps to thereby expose an area 10 of the BARC layer; removing the BARC layer in the area 10 by a dry etch process using the remaining resist layer as a mask; implanting dopant elements into the fins present in the area 10 using the BARC and resist layers as a mask; and removing the remainder of the resist and BARC layers. The method additionally includes depositing an etch stop layer 3 directly on the fins 1 before the steps of depositing the BARC layer 4 and the resist layer 5.
Inventors:
VASILE PARASCHIV
WINROTH GUSTAF
EFRAIN ALTAMIRANO SANCHEZ
SABRINA LOCOROTONDO
RAJA ATHIMULAM
WINROTH GUSTAF
EFRAIN ALTAMIRANO SANCHEZ
SABRINA LOCOROTONDO
RAJA ATHIMULAM
Application Number:
JP2014145950A
Publication Date:
April 09, 2015
Filing Date:
July 16, 2014
Export Citation:
Assignee:
IMEC VZW
International Classes:
H01L21/266; H01L21/265; H01L21/316; H01L21/336; H01L29/78
Domestic Patent References:
| JPH11340235A | 1999-12-10 | |||
| JP2013145874A | 2013-07-25 | |||
| JP2013012735A | 2013-01-17 | |||
| JP2003318126A | 2003-11-07 |
Foreign References:
| US20110171795A1 | 2011-07-14 | |||
| US6787476B1 | 2004-09-07 | |||
| US20050173744A1 | 2005-08-11 |
Other References:
XIE SHAO ET AL.: ""Wet-Developable Organic Anti-Reflective Coatings For Implant Layaer Applications"", SEMICON CHINA 2004, vol. XP055088957, JPN6018004917, 17 March 2004 (2004-03-17), US, pages 1 - 9, ISSN: 0003830236
Attorney, Agent or Firm:
Takuji Yamada
Mitsuo Tanaka
Mikio Takeuchi
Haruo Nakano
Mitsuo Tanaka
Mikio Takeuchi
Haruo Nakano