Title:
METHOD FOR EVALUATING PHOTOMASK, AND PROGRAM
Document Type and Number:
Japanese Patent JP3699948
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To achieve a practical yield prediction method of photomasks by using a critical area analysis.
SOLUTION: Defect inspection information used for inspecting defects on photomasks is reflected on design data in mask patterns and a critical area is calculated to the design data (step S1). A defect density distribution to the number of defects per unit area on the photomasks to the size of defects on the photomasks is estimated (step S2). The critical area and the defect density distribution are estimated and the number of killer defects on the photomasks is acquired (steps S3, S4). The yield of the photomasks is predicted based on the number of killer defects (step S5).
Inventors:
Shinji Yamaguchi
Soichi Inoue
Mari Inoue
Soichi Inoue
Mari Inoue
Application Number:
JP2002268659A
Publication Date:
September 28, 2005
Filing Date:
September 13, 2002
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G01N21/956; G03F1/68; G03F1/70; H01L21/027; H01L21/66; (IPC1-7): G01N21/956; G03F1/08; H01L21/027; H01L21/66
Domestic Patent References:
| JP2002299401A | ||||
| JP9191032A | ||||
| JP2002100548A | ||||
| JP2002076086A | ||||
| JP8162510A | ||||
| JP48040376A |
Attorney, Agent or Firm:
Takehiko Suzue
Sadao Muramatsu
Atsushi Tsuboi
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
Sadao Muramatsu
Atsushi Tsuboi
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
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