METHOD OF FABRICATING PLASMA REACTOR PART

Title:

METHOD OF FABRICATING PLASMA REACTOR PART

Document Type and Number:

Japanese Patent JP2008247734

Kind Code:

A

Abstract:

To provide a method of fabricating a silicon part which has enhanced corrosion resistance and is particularly suitable for use in plasma or other reactive environments.

The method of fabricating the silicon part includes: (a) providing a silicon sample using a cyclic silicon growth process comprising: (a1) initiating silicon growth in a first inert gas atmosphere for a first time period; (a2) continuing silicon growth in a reducing gas atmosphere for a second time period; (a3) continuing silicon growth in a second inert gas atmosphere for a third time period; and (a4) performing (a2) and (a3) for a sufficient number of cycles until desired properties are obtained for the silicon sample; (b) machining the silicon sample to form a part; and (c) annealing the part. The annealing (c) may use an improved annealing process comprising successively exposing the part to one or more kinds of gases.

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Inventors:

RYABOVA ELMIRA
YUAN JIE
SUN JENNIFER

Application Number:

JP2008069212A

Publication Date:

October 16, 2008

Filing Date:

March 18, 2008

Export Citation:

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Assignee:

APPLIED MATERIALS INC

International Classes:

C30B29/06; C01B33/02; C30B15/00; C30B33/02; H01L21/205; H01L21/3065

Domestic Patent References:

JP2006347856A	2006-12-28
JP2005203575A	2005-07-28
JPH088264A	1996-01-12
JP2003282577A	2003-10-03

Attorney, Agent or Firm:

Yoshiaki Anzai

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