エピタキシャル炭化珪素単結晶基板の製造方法

Japanese Patent JP4850960

B2

Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T 0 ) and a set growth temperature (T 2 ) which are respectively lower and higher than a growth temperature (T 1 ) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.

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JP2009073696	SINGLE CRYSTAL SiC AND ITS PRODUCTION METHOD

Takashi Aigo
Hiroshi Tsuge
Taizo Hoshino
Tatsuo Fujimoto
Masakazu Katsuno
Masashi Nakabayashi
Hirokatsu Yashiro

JP2010088911A

January 11, 2012

April 07, 2010

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Nippon Steel Corporation

C30B29/36; C23C16/42; C30B25/16; H01L21/205

JP2009295728A
JP9052796A
JP2009256138A
JP2003212694A

W.CHEN,et al.,Growth and characterization of 4H-SiC epilayers on substrates with different off-cut angles,JOURNAL OF APPLIED PHYSICS,2005年,vol.98,p.114907-1~114907-6
Hidekazu TSUCHIDA, et al.,Growth of thick 4H-SiC(000-1) epilayers and reduction of basal plane dislocations,JAPANESE JOURNAL OF APPLIED PHYSICS,2005年,vol.44,No.25,p.L806-L808

Kazuya Sasaki
Katsuo Naruse
Tomohiro Nakamura
Masashi Torino

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