Title:
シリコン単結晶引き上げ用の石英ガラスルツボおよびシリコン単結晶の製造方法
Document Type and Number:
Japanese Patent JP4866924
Kind Code:
B2
Abstract:
The invention provides a quartz glass crucible for pulling up single-crystal silicon, and a method for producing single-crystal silicon by using it. The quartz glass crucible is characterized by having a crystallization promoter-containing layer as the inner surface thereof and is characterized in that , when single-crystal silicon is pulled up, macular crystallized regions are formed in the inner surface thereof by the action of the crystallization promoter. In the quartz glass crucible, a crystallized substance is not generated sparsely in the inner surface thereof and therefore does not shed off; outgassing holes are not generated through micro-peeling off of a part of the crystal layer formed in the inner surface thereof, unlike in a case where a crystal layer is formed entirely in the inner surface thereof; molten silicon does not penetrate into the area between the crystal layer and the underlying glass layer through the outgassing holes formed by micro-peeling off; and therefore the quartz glass crucible brings about a high yield.
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Inventors:
Masaru Fujishiro
Fumio Takahashi
Abe Fumi
Shinichi Nakajima
Shinobu Tsutsui
Fumio Takahashi
Abe Fumi
Shinichi Nakajima
Shinobu Tsutsui
Application Number:
JP2009028444A
Publication Date:
February 01, 2012
Filing Date:
February 10, 2009
Export Citation:
Assignee:
Kuramoto Manufacturing Co., Ltd.
International Classes:
C30B29/06; C03B20/00; C30B15/10
Domestic Patent References:
| JP2006021985A | ||||
| JP2005145731A | ||||
| JP2003095678A |
Attorney, Agent or Firm:
Toshio Nishizawa