Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3504247
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of sufficiently assuring etching resistance as a mask material and accurately working a member to be worked.
SOLUTION: The method for manufacturing the semiconductor device comprises a step of forming the mask material 105, having an aromatic ring and containing a content of a carbon atom of 80 wt.% or more on a member 104 to be worked, a step of forming a mask material pattern 105 by etching the material 105 in a desired pattern, and a step of etching the member 104 with the mask material pattern 105 as a mask.
Inventors:
Junko Ouchi
Yasuhiko Satoh
Eiji Shiobara
Hisataka Hayashi
Norihisa Oiwa
Yasunobu Ohnishi
Yasuhiko Satoh
Eiji Shiobara
Hisataka Hayashi
Norihisa Oiwa
Yasunobu Ohnishi
Application Number:
JP2001381504A
Publication Date:
March 08, 2004
Filing Date:
December 14, 2001
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G03F7/075; B05D1/32; B05D7/00; G03F7/11; G03F7/38; G03F7/40; H01L21/027; H01L21/28; H01L21/302; H01L21/3065; H01L21/3213; H01L21/768; (IPC1-7): H01L21/3065; B05D1/32; B05D7/00; G03F7/075; G03F7/11; G03F7/38; G03F7/40; H01L21/027; H01L21/28; H01L21/3213; H01L21/768
Domestic Patent References:
| JP2000310863A | ||||
| JP4287047A |
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)
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