Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR SILICON WAFER
Document Type and Number:
Japanese Patent JP2021130579
Kind Code:
A
Abstract:
To provide a silicon wafer manufacturing method capable of restraining SF in an epitaxial film by restraining P-aggregation defects (Si-P defects).SOLUTION: A silicon wafer manufacturing method includes: a step S2 of forming an Si oxide film with thickness of 300 nm or more only on a rear surface of a substrate manufactured of an Si single crystal ingot grown by a Czochralski method, having a dopant of phosphorus, and adjusted to resistivity of 1.05 mΩcm or less and a solid solution oxygen concentration of 0.9×1018 atoms/cm3 or less at temperature of 500°C or less by a CVD method; a heat treatment step S4 for holding the substrate under an oxidization atmosphere at constant temperature of 1100-1250°C for 30-120 minutes after the step S2; a surface oxidation film removing step S5 of removing a heat oxidation film formed on a surface side of the substrate after the step S4; and an epitaxial film deposition step S7 of depositing an Si single crystal epitaxial film on the surface of the substrate after the step S5.SELECTED DRAWING: Figure 1
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Inventors:
SENDA TAKESHI
SUDO HARUO
SUDO HARUO
Application Number:
JP2020026334A
Publication Date:
September 09, 2021
Filing Date:
February 19, 2020
Export Citation:
Assignee:
GLOBALWAFERS JAPAN CO LTD
International Classes:
C30B29/06; C23C16/01; C23C16/24; C30B25/20; H01L21/205
Attorney, Agent or Firm:
Kinoshita Shigeru
Yuko Sawada
Yuko Sawada