Title:
METHOD FOR MEASURING ETCHED AMOUNT
Document Type and Number:
Japanese Patent JPH01149977
Kind Code:
A
Abstract:
PURPOSE:To indirectly surely measure etched amount in a short time by forming an etching pattern on the surface of a silicon single crystalline plate with a masking material and measuring the amount of traveling of a shift pattern while performing anisotropic etching treatment. CONSTITUTION:An etching pattern 4 is formed by coating the surface of a silicon single crystalline plate 1 whose crystalline direction is made to a face (100) with a masking material 3. This pattern 4 is formed into an octagonal shape surrounded by both four sides 5 parallel to axes X <110> and shift sides 6 parallel to axes Y <100>. Then this single crystalline plate 1 is subjected to anisotropic etching treatment with alkali soln. and the above- mentioned pattern 4 part is worked so that is is regulated to prescribed thickness. In this case, linear shift patterns 7 positioned under the shift sides 6 are moved along the axes Y <100> directions according to the advancement of anisotropic etching. Etched amount in the direction of thickness of the single crystalline plate 1 proportional to the amount of traveling can be measured by measuring the moving amount.
Inventors:
TOMIKAWA MITSUHIRO
Application Number:
JP31043387A
Publication Date:
June 13, 1989
Filing Date:
December 07, 1987
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
C23F1/40; C30B29/06; C30B33/00; C30B33/10; (IPC1-7): C23F1/40; C30B29/06; C30B33/00
Attorney, Agent or Firm:
Masuo Oiwa (2 outside)