To provide a method of pattern formation, having excellent uniformity of local pattern dimension (Local CDU, nm) and circularity in formation of a fine pattern such as a hall pattern having a hole size of 75 nm or less (preferably 45 nm or less) by an organic developer; an active light-sensitive or radiation-sensitive resin composition and a resist film used for the same; a method of manufacturing electronic devices using these; and electronic devices.
Provided is a method of pattern formation comprising steps of: (1) forming a film by an active light-sensitive or radiation-sensitive resin composition containing the following resin (A) and the following compound (B): (A) a resin containing a repeating unit (a0) having a -SO2- group and a repeating unit (a1) having a group which decomposes by an action of an acid to generate a polar group, wherein a molar average value of Clog P values of each monomer corresponding to each repeating unit except the repeating unit (a0) is 2.0 or more; (B) a compound which generates an acid by irradiation of active light or radiation; (2) exposing the film; (3) and forming a negative-type pattern by developing the exposed film by a developer containing an organic solvent.
JP2012173419A | 2012-09-10 | |||
JP2012168334A | 2012-09-06 | |||
JP2011191727A | 2011-09-29 | |||
JP5035466B1 | 2012-09-26 | |||
JP2013163652A | 2013-08-22 |
Toshiyuki Ozawa
Hasegawa Hiromichi
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