Title:
METHOD FOR POLISHING ORGANIC FILM ON SEMICONDUCTOR SUBSTRATE USING RESIN PARTICLE AND SLURRY
Document Type and Number:
Japanese Patent JP2004128211
Kind Code:
A
Abstract:
To provide a method for polishing an organic film to flatten its surface without damaging the underlying layer of the organic film on the semiconductor substrate, and to provide a slurry suited for the purpose.
When a resist 13 which is the organic film on the semiconductor substrate is polished chemically and mechanically using slurry containing resin particles, an ASG film 12 harder than the resin particles is formed as the underlying layer of the resist 13. Since the slurry containing the resin particles having diameters larger than the opening dimension 1d of the groove hole DT is used, erosion, scratch or jamming can be prevented.
Inventors:
TAKAYASU ATSUSHI
MURAKAMI SATOSHI
MURAKAMI SATOSHI
Application Number:
JP2002290106A
Publication Date:
April 22, 2004
Filing Date:
October 02, 2002
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
B24B37/00; C09G1/02; H01L21/304; H01L21/3105; H01L21/334; H01L21/312; (IPC1-7): H01L21/304; B24B37/00
Attorney, Agent or Firm:
Takehiko Suzue
Sadao Muramatsu
Atsushi Tsuboi
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
Sadao Muramatsu
Atsushi Tsuboi
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
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