To provide an organic-inorganic complex capable of forming films which exhibit sufficiently low dielectric constants, even when non-cross-linked sites in the films are reduced, to provide a film comprising the organic-inorganic complex, and to provide a method for producing a semiconductor device using the film.
This method for producing the organic-inorganic complex comprises mixing a precursor A containing a specific cross-linkable compound prepared in the first preparation process with a precursor B containing an acid catalyst prepared in the second preparation process in a mixing process to hydrolyze the specific cross-linkable compound, and then adding an alkali catalyst to the hydrolysis product in a complex-forming process to condense the hydrolysis product, thus producing the organic-inorganic complex.
HIRATA KUNIO
NOMURA SHIGEKI
Shinji Oga
Toshifumi Onuki