METHOD FOR PRODUCTION OF GALLIUM OXIDE SINGLE CRYSTAL COMPOSITE, AND METHOD OF PRODUCING NITRIDE SEMICONDUCTOR FILM USING THE SAME

Title:

METHOD FOR PRODUCTION OF GALLIUM OXIDE SINGLE CRYSTAL COMPOSITE, AND METHOD OF PRODUCING NITRIDE SEMICONDUCTOR FILM USING THE SAME

Document Type and Number:

Japanese Patent JP2007137728

Kind Code:

A

Abstract:

To provide a selective production method for a gallium oxide single crystal composite having on its uppermost surface, the gallium nitride layer comprising cubic or hexagonal gallium nitride, and also to provide a method of producing a nitride semiconductor film.

This invention relates to a method for production of the gallium oxide single crystal composite having the gallium nitride layer on the surface layer portion of a substrate comprising the gallium oxide single crystal. The gallium nitride layer having its uppermost surface of a cubic or hexagonal crystal measured by a reflection high-energy electron diffraction is selectively produced by controlling the time required for nitriding when forming the gallium nitride layer through the nitriding of the substrate surface by a nitrogen plasma. The nitride semiconductor film is produced by growing it on the above composite.

Inventors:

NANISHI YASUYUKI
ARAKI TSUTOMU
OHIRA SHIGEO
SUZUKI SATOHITO

Application Number:

JP2005334951A

Publication Date:

June 07, 2007

Filing Date:

November 18, 2005

Export Citation:

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Assignee:

NIPPON LIGHT METAL CO
RITSUMEIKAN

International Classes:

C30B29/38; C30B1/10; H01L21/203; H01L21/205; H01L33/32; H01L33/36

Attorney, Agent or Firm:

Katsuo Naruse
Tomohiro Nakamura
Kazuya Sasaki

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