PURPOSE: To suppress the defects produced when hydrogen is discharged and maintain the high film characteristics by a method wherein the amorphous silicon carbide film is treated in a hydrogen plasma atmosphere under a temperature of 250°C-550°C to discharge floating hydrogen.

CONSTITUTION: Some of hydrogen captured in an amorphous silicon carbide film producing process remains in the film as floating hydrogen. The floating hydrogen is removed by a hydrogen plasma treatment under a specific temperature. As the conditions of the hydrogen plasma treatment, a temperature of 250°CW550°C, more preferably 350°C-400°C, a hydrogen flow rate of 0.5W200SCCM, more preferably 1W150SCCM, a current density of 0.01W1.0W/cm2, more preferably 0.1-0.5W/cm2 and a discharge time pressure of 0.05-1Torr, more preferably 0.1-0.5Torr are employed. With this constitution, the defects produced when hydrogen is discharged can be suppressed and the high film characteristics can be maintained.