Title:
METHOD FOR TREATING SURFACE OF SUBSTRATE AND THE SAME FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3662472
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for treating the surface of a substrate, especially, a method for treating the surface of a substrate for a semiconductor device, which is industrially beneficial in that only unwanted films can be selectively removed without damaging the already formed device structure to easily form a desired structure in a good state, and which is economical in that the treat ment result can be remarkably improved while the treatment time for the sur face of a substrate can be shortened.
SOLUTION: In the case of treating the surface of such a substrate that necessary high-density films and unnecessary films having a relatively low density than the high-density films may coexist on the same surface, the surface of the substrate is treated in such a gas atmosphere wherein a dehydrated hydrogen fluoride gas and an inactive gas heated to room temperature or above coexist. As a result, the method for treating the surface of a substrate, especially, a method for treating the surface of a substrate for a semiconductor device, wherein at least one low-density film can be selectively removed without damaging the high-density films exceeding torelance, can be established.
Inventors:
Tetsu Kikuchi
Matsuno Kosaku
Wataru Haruru
Matsuno Kosaku
Wataru Haruru
Application Number:
JP2000135881A
Publication Date:
June 22, 2005
Filing Date:
May 09, 2000
Export Citation:
Assignee:
MFS Co., Ltd.
International Classes:
H01L21/302; H01L21/306; H01L21/311; H01L21/28; (IPC1-7): H01L21/302
Domestic Patent References:
| JP3190130A | ||||
| JP3204930A |
Other References:
N.Miki et al.,Gas-Phase Selective Etching of Native Oxide,IEEE Trans. on Electron Devices,米国,1990年 1月,Vol.37, No.1,p.107-115
Attorney, Agent or Firm:
Toshieko Kondo
Katsuhiro Yoshida
Katsuhiro Yoshida