Title:
シード結晶からキャストシリコンを製造するための方法及び装置
Document Type and Number:
Japanese Patent JP2010534189
Kind Code:
A
Abstract:
Methods are provided for casting silicon for photovoltaic cells and other applications. With such methods a cast body of bi-crystal silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.
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Inventors:
Stoddard, Nathan Gee
Application Number:
JP2010518293A
Publication Date:
November 04, 2010
Filing Date:
July 16, 2008
Export Citation:
Assignee:
BP Corporation North America, Inc.
International Classes:
C01B33/02; C30B11/00; C30B29/06; H01L31/04
Domestic Patent References:
| JPH107493A | 1998-01-13 | |||
| JPH10194718A | 1998-07-28 | |||
| JPH092897A | 1997-01-07 |
Foreign References:
| WO2007004631A1 | 2007-01-11 |
Attorney, Agent or Firm:
Shinjiro Ono
Kazuo Shamoto
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Minako Matsuyama
Morishita Azusa
Kazuo Shamoto
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Minako Matsuyama
Morishita Azusa