Title:
微結晶有機半導体膜、有機半導体トランジスタ、及び有機半導体トランジスタの製造方法
Document Type and Number:
Japanese Patent JP6676181
Kind Code:
B2
Abstract:
[Problem] To provide: an organic semiconductor film which is capable of effectively inhibiting the formation and expansion of cracks, even if patterned or exposed to high heat; an organic semiconductor transistor in which the organic semiconductor film is used; and a method for producing the organic semiconductor transistor. [Solution] Provided are: a microcrystalline organic semiconductor film including a compound which has a molecular weight of 3000 or lower, and which is represented by general formula (1), the size of crystal domains in said microcrystalline organic semiconductor film being at least 1 nm, but not more than 100 nm; an organic semiconductor transistor in which the organic semiconductor film is used; and a method for producing the organic semiconductor transistor. X, Y, and Z represent specific ring-forming atoms. Rand Reach represent hydrogen, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. Rand Reach represent a halogen, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n are integers in the range of 0-2.
Inventors:
Takashi Goto
Fuku Saki Eiji
Tetsuya Watanabe
Fuku Saki Eiji
Tetsuya Watanabe
Application Number:
JP2018542392A
Publication Date:
April 08, 2020
Filing Date:
September 15, 2017
Export Citation:
Assignee:
FUJIFILM Corporation
International Classes:
H01L51/40; C07D493/14; C07D495/14; C07D513/14; C07D517/14; H01L29/786; H01L51/05; H01L51/30
Domestic Patent References:
| JP2015195362A | ||||
| JP2008085250A |
Foreign References:
| US20150340630 |
Attorney, Agent or Firm:
Patent corporation Iida and Partners
Toshizo Iida
Shuichi Akabane
Ikuo Shinoda
Toshizo Iida
Shuichi Akabane
Ikuo Shinoda