To improve processing quality and processing accuracy of a microfabrication device utilizing an atomic force microscope.
A focused ion beam device is incorporated in the microfabrication device utilizing an atomic force microscope, and by using fine processing ability of a focused ion beam 8 in etching or deposition, processing of an atomic force microscope probe 11 for processing, removal of deposition on the probe, formation of a drift marker, processing of a vertical cross section, production of scribe lines of a processing portion, and grooving for avoiding stress concentration at a start point of processing are carried out so as to compensate drawbacks of a single microfabrication device utilizing an atomic force microscope, and thereby, improving the processing quality and processing accuracy.
WATANABE NAOYA
JP2000353489A | 2000-12-19 | |||
JP2000081381A | 2000-03-21 | |||
JP2001108605A | 2001-04-20 | |||
JPH09274883A | 1997-10-21 |
Next Patent: SYNCHRONIZATION SYSTEM FOR AT LEAST TWO ROBOT ARMS, AND ITS CONTROL METHOD