MICROSCOPIC STRUCTURE FORMING METHOD FOR COMPOUND SEMICONDUCTOR

Title:

MICROSCOPIC STRUCTURE FORMING METHOD FOR COMPOUND SEMICONDUCTOR

Document Type and Number:

Japanese Patent JPH0677205

Kind Code:

A

Abstract:

PURPOSE: To provide a method for formation of an AlxGa1-xAs/GaAs series microscopic structure having excellent controllability, uniformity, a small damage sustaining property and workability.

CONSTITUTION: A GaAs spacer layer 16 and a GaxIn1-xP (0≤x<1) mask layer 17 are continuously crystal-grown. An etching mask is formed using a hydrochloric acid etched. An AlxGa1-xAs 15/GaAs14 quantum well structure is etchant using a sulfuric acid etchant, and a compound semiconductor of microscopic structure is formed.

Inventors:

WAKABAYASHI SHINICHI
TOGO HITOMARO
TOYODA YUKIO

Application Number:

JP22687692A

Publication Date:

March 18, 1994

Filing Date:

August 26, 1992

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

H01L21/306; H01L21/308; H01L21/335; H01S5/00; (IPC1-7): H01L21/306; H01S3/18

Attorney, Agent or Firm:

Akira Kobiji (2 outside)

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