PURPOSE: To achieve an MIM-type capacitor where the capacitance per unit area is improved by providing a lower electrode having a surface with recesses an projections and an insulation film covering a lower electrode along the surface shape of the lower electrode and an upper electrode.

CONSTITUTION: An MIM(Metal-Insulator-Metal) type capacitor is constituted of a lower electrode film 12, an insulation film 13, and an upper electrode film 14 provided in order on a semiconductor substrate 11, where the lower electrode film 12 has a recessed and projecting surface by forming projecting parts 12a and groove parts 12b alternately. The insulation film 13 and the upper electrode film 14 are formed along the recessed and projecting surface of the lower electrode film 12 and so that the lower electrode film 12 is covered, thus increasing the surface area of the lower electrode per unit area of a chip and increasing the capacitance per chip unit area.