Title:
MOS TRANSISTOR HAVING MODIFIED GATE DIELECTRIC BODY
Document Type and Number:
Japanese Patent JP3258980
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a MOS transistor of a constitution, wherein the dielectric characteristic of a gate dielectric body are enhanced and miniaturization, high- speed operation and low-voltage operation of the transistor are made possible.
SOLUTION: This transistor has a gate dielectric body having a composition, which consists of a Ta1-xAlxOy material made on the conditions of x=0.03 to 0.7 and y=1.5 to 3, a Ta1-xSixOy material where x=0.05 to 0.15 and y=1.5 to 3 and a Ta1-x-zAlxSizOy material made on the conditions of 70>x+z>5, z<0.15 and y=1.5 to 3. By these materials, the modified dielectric characteristics of the gate dielectric body are realized, in comparison with those of a standard SiO2 gate dielectric body, and the gate dielectric body is kept as it is substantially in an amorphous state up to a high temperature. Thereby, the formation of an SiO2 interfacial layer is delayed. If the interfacial layer is not so, the layer dominates the dielectric characteristics of the gate dielectric body and the overall effectiveness of using a high dielectric material is reduced.
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Inventors:
Glenn B. Allers
Robert McCreamore Fleming
Lynn Francis Chenie Mayer
Robert Bruce Van Dover
Robert McCreamore Fleming
Lynn Francis Chenie Mayer
Robert Bruce Van Dover
Application Number:
JP14899399A
Publication Date:
February 18, 2002
Filing Date:
May 28, 1999
Export Citation:
Assignee:
Lucent Technologies, Inc.
International Classes:
H01L29/78; H01L21/28; H01L29/51; H01L21/316; H01L29/49; (IPC1-7): H01L29/78
Domestic Patent References:
| JP6450428A |
Other References:
【文献】ARIE Y,”DIELECTRIC MATERIAL”,RCA TECHNICAL NOTES,米国,1986年8月19日,No.1380,pp.1
Attorney, Agent or Firm:
Masao Okabe (11 others)