To provide a mounting structure of a semiconductor device which has a vertical semiconductor element formed to be surrounded by an insulating isolation trench passing through a silicon substrate, can separately connect a rear electrode of the vertical semiconductor element and also is excellent in heat dissipation.

The mounting structure of the semiconductor device 101 has vertical semiconductor elements 44-48 formed, which are surrounded by the insulating isolation trench T passing through the silicon substrate 20 and have electrodes dr1 and dr2 on both faces of the silicon substrate 20. The semiconductor device 101 is mounted on another silicon substrate 10 equipped, on its surface, with an electrode pattern 12 corresponding to the rear electrode dr2 of the elements 44-48 to have the rear electrode dr2 connected with the electrode pattern 12 via a solder bump S, thereby providing the mounting structure.