To provide a bispectral detector having high package density with excellent temporal and spatial coherence, that can be manufactured easily.
A bispectral detector includes: a stack which includes an upper semiconductor layer 18 and a lower semiconductor layer 14 with a first conductivity type and which is partitioned by an intermediate layer 16 forming a potential barrier between the upper layer 18 and the lower layer 14; and an upper semiconductor region 68 and a lower semiconductor region 66 with a second conductivity type, the semiconductor region 66 being at least partially located at a bottom of an opening 22 passing through the upper layer and the intermediate layer. At least one top surface of the upper layer and the lower layer is entirely covered by the semiconductor regions 66 and 68. A notch 62 is formed in the periphery of each unit detection element through at least the thicknesses of the semiconductor regions 66 and 68 from the top surface of the stack for forming the semiconductor regions 66 and 68. The semiconductor regions 66 and 68 entirely cover either of semiconductor layers 18 and 14.
JACK BAILEY
| JPS5593275A | 1980-07-15 | |||
| JPH06120554A | 1994-04-28 |
| US20050045910A1 | 2005-03-03 | |||
| US6034407A | 2000-03-07 |
Masatake Shiga
Takashi Watanabe
Shinya Mitsuhiro