PURPOSE: To provide a multilayered solid-state image sensing device and its manufacturing method wherein electric field concentration at the edge of a picture element electrode is relieved, and the laminated surface can be smoothed by using easy structure.
CONSTITUTION: An MOS transistor is constituted by forming a source part 2 and a drain part 3 on a semiconductor substrate 1, and arranging a gate electrode 4. First metal electrodes 8, 9 which are connected with the source part 2 and the drain part 3 via a first insulating film 7 are formed. Picture element electrodes 12 which are brought into contact with a second metal electrode 11 connected with the first metal electrodes 8 via a second insulating film 10 are formed. An insulating film 13 obtained by thermally oxidizing the picture element electrodes 12 is arranged in the gap of each of the picture element electrodes 12. A first charge injection blocking layer 14, a photoelectric conversion film 15, a second charge injection block layer 16, and a transparent electrode 17 are sequentially laminated on the insulating film 13, and a multilayered solid-state image sensing device is constituted.
ARIMA MICHITSUGU
ANDO FUMIHIKO
KOSUGI MITSUO
OLYMPUS OPTICAL CO