Title:
ORGANOMETAL VAPOR GROWTH METHOD
Document Type and Number:
Japanese Patent JPH0745525
Kind Code:
A
Abstract:
PURPOSE: To present the growth condition of AlGaSb based semiconductor by an MOCVD method excellent in mass-productivity, and obtain AlGaAs based semiconductor wherein Al mixed crystal ratio is comparatively high and the surface morphology is excellent.
CONSTITUTION: Ethyl based compound of Al, Ga and Sb is used as material gas, and AlGaSb based compound is grown by setting the V/III ratio in the range larger than or equal to 0.5 and smaller than or equal to 2.0.
Inventors:
NAKAMURA FUMIHIKO
KAWAI HIROHARU
KAWAI HIROHARU
Application Number:
JP18839293A
Publication Date:
February 14, 1995
Filing Date:
July 29, 1993
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/205; (IPC1-7): H01L21/205
Attorney, Agent or Firm:
Hidekuma Matsukuma