Title:
GALLIUM NITRIDE COMPOUND SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2591521
Kind Code:
B2
Abstract:
PURPOSE: To effectively check the element breakage at low voltage capable of efficiently performing mass production at high yield as well as improving light emitting efficiency of a p-type layer.
CONSTITUTION: An n type layer 2 and a p-type layer 3 of a gallium nitride base compound semiconductor are provided successively on a square insulating substrate 1. The p-type layer 3 is etched away on the same surface whereon a peripheral edge and one corner part are continuous so as to provide a peripheral etching part 7B and a corner etching part 7A exposing the lower n type layer 2. Next, an n type electrode 4 and a p-type electrode 5 respectively on the surface of the corner strip part 7A and p-type layer 3 provided on the same surface side to be connected and power supplied by wire bonding step. Finally, both electrodes 4 and 5 are laminated on the surface of the p-type layer 3 to provide auxiliary electrodes 6 electrically connected to the p-type element 5 wherefrom the auxiliary electrodes 6 are extended over the surface of the p-type layer 3.
Inventors:
MUKAI TAKASHI
NAKAMURA SHUJI
NAKAMURA SHUJI
Application Number:
JP18159596A
Publication Date:
March 19, 1997
Filing Date:
June 20, 1996
Export Citation:
Assignee:
NICHIA KAGAKU KOGYO KK
International Classes:
H01L29/41; H01L33/32; H01L33/38; H01L33/62; (IPC1-7): H01L33/00
Domestic Patent References:
| JP559442A | ||||
| JP5017186A | ||||
| JP5118788B1 |
Attorney, Agent or Firm:
Toyosu Yasuhiro