Title:
THIN FILM TRANSISTOR AND FORMATION THEREOF
Document Type and Number:
Japanese Patent JP3025342
Kind Code:
B2
Abstract:
PURPOSE: To provide a TFT having a structure having high carrier mobility due to large crystalline grain size of polysilicon in both channel and ohmic regions and no step disconnection of an insulating film and an electrode layer by forming the channel region and the ohmic region of thin polysilicon films.
CONSTITUTION: A first polysilicon film 52 is provided on a glass board 50. On this first polysilicon film 52, a second polysilicon film 58 is formed, directly in a zone where both channel and ohmic regions 64, 62 are to be formed, and interposing a thin intermediate insulating film 56 in a zone except it.
Inventors:
Hiroaki Kakinuma
Mikio Mohri
Katsuaki Sakamoto
Mikio Mohri
Katsuaki Sakamoto
Application Number:
JP16807291A
Publication Date:
March 27, 2000
Filing Date:
July 09, 1991
Export Citation:
Assignee:
Oki Electric Industry Co., Ltd.
International Classes:
H01L29/78; H01L21/336; H01L29/786; (IPC1-7): H01L29/786
Attorney, Agent or Firm:
Takashi Ogaki
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