SEMICONDUCTOR HEAT TREATMENT EQUIPMENT

Title:

SEMICONDUCTOR HEAT TREATMENT EQUIPMENT

Document Type and Number:

Japanese Patent JPH0745602

Kind Code:

A

Abstract:

PURPOSE: To reduce the possibility of hydrogen gas leakage in a clean room, and realize the safe operation of hydrogen gas, by installing a water electrolyzing equipment, and heat-treating a semiconductor wafer by using hydrogen gas, or hydrogen gas and oxygen gas, obtained by the water electrolyzing equipment.

CONSTITUTION: In the course of a semiconductor manufacturing process, a semiconductor wafer 82 is heat-treated by directly or indirectly using hydrogen gas. A water electrolyzing equipment which generates hydrogen gas and oxygen gas by electrolyzing water is installed. The semiconductor wafer 82 is heat- treated by using hydrogen gas or hydrogen gas and oxygen gas which are generated by the water electrolyzing equipment. For example, a hydrogen-oxygen generating equipment 1 provided with the water electrolyzing equipment is installed in a heat treatment equipment for wet oxidation. The hydrogen gas from the hydrogen-oxygen generating equipment 1 is supplied to a hydrogen gas supply port 91A or a quartz reaction tube 81, via a flow rate regulation meter 95 or the like.

Inventors:

HARADA MICHIYUKI
SASAKI TAKASHI
HITOMI SHUJI

Application Number:

JP20990993A

Publication Date:

February 14, 1995

Filing Date:

August 02, 1993

Export Citation:

Click for automatic bibliography generation Help

Assignee:

MITSUBISHI CORP
SHINKO PANTEC CO LTD
JAPAN STORAGE BATTERY CO LTD

International Classes:

H01L21/31; H01L21/316; (IPC1-7): H01L21/31; H01L21/316

Attorney, Agent or Firm:

Takehisa Toyota (1 outside)

Next Patent: MANUFACTURE OF SEMICONDUCTOR DEVICE AND MANAGING METHOD OF ITS MANUFACTURING PROCESS