Title:
DRY-ETCHING APPARATUS
Document Type and Number:
Japanese Patent JP3013782
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To eliminate the change of a stage, due to the wafer size change by cooling the inside of an O-ring by a cooling gas when radiating the heat from a min. sized wafer and radiating the heat through a radiator from the outside of the O-ring, as well as cooling the inside by the cooling gas when radiating from a max. sized wafer.
SOLUTION: A stage 1 has a recess 1b fit to a min. diameter semiconductor wafer 4, O-ring 2 settled in the recess, and high-thermal conductivity annular rubber plate 3 laid at its outside. A wafer 4 having every sizes is cooled by cooling the inside of the O-ring 2 with a He gas and its outside through the plate 3. If the diameter of the wafer 4 differs, there is no need to break the vacuum and change the stage 1 but it suffices for using to it successively prepare only hole rings 5 of various diameter for each wafers.
Inventors:
Eiji Hata
Application Number:
JP19993596A
Publication Date:
February 28, 2000
Filing Date:
July 30, 1996
Export Citation:
Assignee:
Kansai NEC Corporation
International Classes:
C23F4/00; H01L21/302; H01L21/3065; H01L21/68; H01L21/683; (IPC1-7): H01L21/3065; C23F4/00; H01L21/68
Domestic Patent References:
| JP582630A | ||||
| JP697270A | ||||
| JP5182930A | ||||
| JP7335630A | ||||
| JP489547U |