Title:
DEVICE FOR HEAT TREATMENT OF SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPH0741397
Kind Code:
A
Abstract:
PURPOSE: To provide a heat treating device for semiconductors in which a semiconductor crystal can be subjected to multistage heat treatment at a high temp., a block sample can be heat treated, and rapid heating and rapid cooling can be done.
CONSTITUTION: This heat treating device 1 for semiconductors is equipped with a silicon carbide heater 5 as a heat generator and a silicon carbide tube 3 as a reaction tube. In this device, the max. temp. for heat treatment of a sample is ≥1400°C with ≥50mm soaking length, the controllable cooling rate is 0-30°C/min in 1200-1400°C temp. range and 0-25°C/min in 100-1200°C temp. range, and the controllable temp. rising rate is 0-15°C/min in 1200-1400°C temp. range.
Inventors:
IWASAKI TOSHIO
HAGA HIROTSUGU
NAKASHIZU TSUNEO
KOJIMA KIYOSHI
HAGA HIROTSUGU
NAKASHIZU TSUNEO
KOJIMA KIYOSHI
Application Number:
JP18853593A
Publication Date:
February 10, 1995
Filing Date:
July 29, 1993
Export Citation:
Assignee:
NIPPON STEEL CORP
NITTETSU DENSHI KK
NITTETSU DENSHI KK
International Classes:
C30B33/02; H01L21/324; H01L21/477; (IPC1-7): C30B33/02; H01L21/324; H01L21/477
Attorney, Agent or Firm:
Mikio Hatta
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