Title:
NITRIDE SEMICONDUCTOR ELEMENT AND GROWING METHOD OF NITRIDE SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPH1168155
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To mainly increase the outputs of an LED and an LD by arranging a second nitride semiconductor layer, wherein p-type impurities are gradually reduced further it is from a first nitride semiconductor layer, on the first nitride semiconductor layer. SOLUTION: A second p-type nitride semiconductor layer 6 which is slantly doped with p-type impurities is formed on a first nitride semiconductor layer 5. The light-emitting element output can be increased by slantly doping the second p-type nitride semiconductor layer 6 with p-type impurities. That is, the output of the whole element can be increased by arranging a third p-type nitride semiconductor, which acts as a contact layer and is doped with p-type impurities of high concentration, a second p-type nitride semiconductor which is doped with p-type impurities in a position more adjacent to an active layer 4 than the third p-type nitride semiconductor layer 7, and a first nitride semiconductor which is doped with p-type impurities of high concentration in a position more adjacent to the active layer 4 than the second nitride semiconductor.
Inventors:
MUKAI TAKASHI
KUBOTA TAKASHI
NAKAMURA SHUJI
KUBOTA TAKASHI
NAKAMURA SHUJI
Application Number:
JP15180097A
Publication Date:
March 09, 1999
Filing Date:
June 10, 1997
Export Citation:
Assignee:
NICHIA KAGAKU KOGYO KK
International Classes:
H01L21/205; H01L31/04; H01L31/10; H01L33/06; H01L33/32; H01S5/343; (IPC1-7): H01L33/00; H01L21/205; H01L31/04; H01L31/10