Title:
NONVOLATILE MAGNETIC MEMORY
Document Type and Number:
Japanese Patent JP2004179483
Kind Code:
A
Abstract:
To provide a high-output memory cell capable of switching and magnetization inversion with two terminals for a magnetic memory.
An MIS junction laminated film is formed of a diode, a spin injection magnetization inversion inducing layer, and a tunneling type magneto-resistive element, and a bit line and a word line are connected to the laminated film.
Inventors:
HAYAKAWA JUN
Application Number:
JP2002345435A
Publication Date:
June 24, 2004
Filing Date:
November 28, 2002
Export Citation:
Assignee:
HITACHI LTD
International Classes:
G11C11/15; H01F10/16; H01F10/32; H01L21/8246; H01L27/105; H01L43/08; H01L43/10; (IPC1-7): H01L27/105; G11C11/15; H01F10/16; H01F10/32; H01L43/08; H01L43/10
Domestic Patent References:
| JP2002305337A | 2002-10-18 |
Attorney, Agent or Firm:
Katsuo Ogawa
Kyosuke Tanaka
Takashi Sasaki
Kyosuke Tanaka
Takashi Sasaki