Title:
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
Japanese Patent JP2020150083
Kind Code:
A
Abstract:
To improve controllability in semiconductor memory.SOLUTION: A nonvolatile semiconductor memory device comprises a memory string group where memory strings, constituted by series connection of multiple nonvolatile memory cells, are laminated by k layers, a selection transistor group consisting of k selection transistors provided corresponding to respective memory strings, n bit line groups placed in parallel with respective memory strings, and n bit line contacts placed in the vertical direction and connected with the n bit line groups, respectively. The selection transistor group is sectioned into n selection transistor partial groups consisting of k/n selection transistors, and the k/n selection transistors belonging to this partial group are connected with one of the corresponding n bit line contacts, respectively.SELECTED DRAWING: Figure 3
Inventors:
SHIGA HIDEHIRO
Application Number:
JP2019045059A
Publication Date:
September 17, 2020
Filing Date:
March 12, 2019
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L27/11551; H01L21/336; H01L27/11519; H01L27/11548; H01L27/11565; H01L27/11575; H01L27/11578; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Takahashi Hayashi & Partners