Title:
酸化物単結晶の製造方法及び酸化物単結晶引き上げ装置
Document Type and Number:
Japanese Patent JP6702249
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a production method of an oxide single crystal capable of suppressing generation of a void.SOLUTION: In a production method of an oxide single crystal for rearing a single crystal of oxide from a melt of an oxide raw material in a crucible by a pulling-up method, control is carried out for a diameter of the single crystal reared by adjusting output from a heating apparatus for heating the melt in the crucible, and a temperature drop rate v at the crucible bottom during rearing of the single crystal is set at 6°C/h or lower and/or a continuous temperature drop ▵T at the crucible bottom during rearing of the single crystal is set to be lower than 12°C.SELECTED DRAWING: Figure 2
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Inventors:
Atsushi Abe
Application Number:
JP2017073794A
Publication Date:
May 27, 2020
Filing Date:
April 03, 2017
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
C30B29/30; C30B15/22; F27B14/06; F27B14/14; F27B14/20
Domestic Patent References:
| JP54009173A | ||||
| JP55060092A | ||||
| JP2011037643A | ||||
| JP56054299A | ||||
| JP2017186188A | ||||
| JP2018145071A |
Attorney, Agent or Firm:
Hideaki International Patent Office