Title:
P TYPE GaAs SUBSTRATE ZnSe SYSTEM PHOTODIODE AND P TYPE GaAs SUBSTRATE ZnSe SYSTEM AVALANCHE PHOTODIODE
Document Type and Number:
Japanese Patent JP3912226
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a highly reliable photodiode having sensitivity in a blue, purple, and near-ultraviolet lights, and reducing dark currents.
SOLUTION: This ZnSe system photodiode is configured of a p-type single crystal GaAs substrate, a super-lattice epitaxial grown on the p-type single crystal GaAs substrate in which p-type ZnSe and p-type ZnTe are repeatedly laminated for continuously changing a band gap, a p-type Zn1-xMgxSySe1-y layer epitaxial grown on the super-lattice, i-type Zn1-xMgxSySe1-y layer epitaxial grown on the p-type Zn1-xMgxSySe1-y, an n-type Zn1-xMgxSySe1-y layer epitaxial grown on the i-type Zn1-xMgxSySe1-y layer, an (n) metallic electrode formed on the n-type Zn1-xMgxSySe1-y layer, and a p-metallic electrode formed on the bottom face of the p-type single crystal GaAs substrate.
Inventors:
Takato Ando
Yuki Abe
Takao Nakamura
Yuki Abe
Takao Nakamura
Application Number:
JP2002244795A
Publication Date:
May 09, 2007
Filing Date:
August 26, 2002
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L31/10; G01J1/02; H01L21/8238; H01L31/00; H01L31/0248; H01L31/0256; H01L31/0296; H01L31/0328; H01L31/0352; H01L31/036; H01L31/072; H01L31/105; H01L31/107; H01L31/18; (IPC1-7): H01L31/10; H01L31/107
Domestic Patent References:
| JP9199801A | ||||
| JP2000223736A | ||||
| JP5218565A | ||||
| JP6097505A |
Other References:
Ishikura et al,Stable Avalanche-photodiode Operation of ZnSe-based p+-n Structure Blue-Ultraviolet Photodetectors,Appl.Phys.Lett.,2000年,76,1069-1071
Attorney, Agent or Firm:
Shigeki Kawase
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