Title:
【発明の名称】電界放出素子の形成方法
Document Type and Number:
Japanese Patent JP3086445
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a field-emission element of various types by which obstacles of prior art such as high leakage current or the like can be overcome. SOLUTION: This field-emission element contains plural tip parts 2 composed in each aperture 5 which are formed by a gate electrode. When a prescribed voltage between the gate and a cathode is applied, electrons are emitted from one or more tip parts 2 into a vacuum. The tip parts 2 are made of single- crystal silicon 1 or polycrystal line silicon, and all of them have nearly same the height and end in the boundary layer between single-crystal silicon 1 or polycrystal line silicon and an insulator 3, respectively. The plural tip parts 2 are formed through plasma etching without special lithographic process. The tip-part forming process can be applied to a substrate of an arbitrary size, so that this field-emission element can be applied to a flat panel display.
Inventors:
Thomas Bayer
Dr. Johann Greshener
Samuel Cult
Klaus Meisner
Rudolph Paul
Dr. Johann Greshener
Samuel Cult
Klaus Meisner
Rudolph Paul
Application Number:
JP301999A
Publication Date:
September 11, 2000
Filing Date:
January 08, 1999
Export Citation:
Assignee:
International Business Machines Corporation
International Classes:
H01J9/02; H01J1/304; H01J3/02; H01J29/04; H01J31/12; (IPC1-7): H01J9/02; H01J1/304
Domestic Patent References:
| JP945215A | ||||
| JP10177837A |
Attorney, Agent or Firm:
Jiro Yamamoto (2 outside)