To provide a pad for polishing a chemical machine which can suitably be adapted to the polishing of a metal film and an insulating film by which a flat polishing face can be obtained and slurry is efficiently removed, and which has a sufficient life, can give high polishing speed, and has a scratch reduction effect.
In the polishing pad, a groove is formed on a polishing face so as to crosse one virtual straight line from the center of the polishing face to a peripheral part for a plurality of times. A groove width is in a range of 0.1 to 1.5 mm, and a groove depth is in a range of 0.9 to 9.8 mm. A minimum distance between adjacent intersections crossing the virtual straight line is in a range of 0.3 to 2.0 mm. A ratio of the depth with respect to the thickness of the polishing pad is in a range of 1/7 to 1/1.1.
HASEGAWA TORU
SAKURAI FUJIO
