Title:
半導体製造装置用部品
Document Type and Number:
Japanese Patent JP7410730
Kind Code:
B2
Abstract:
To suppress plasma-induced degradation of junctions.SOLUTION: Parts for a semiconductor manufacturing apparatus comprise a first ceramic member formed of a material containing AlN as a main component, a second ceramic member formed of a material containing AlN as a main component, and a junction that is arranged between the first ceramic member and the second ceramic member and joins the first ceramic member and the second ceramic member. The junction is represented by a chemical formula A(0.8-1)B(11-12)O(18-19) (in which A is a rare earth element and B is Al. The same applies below); contains at least one Al-rare earth composite oxide selected from (i) complex oxide of hexagonal crystal, (ii) complex oxide that is represented by a chemical formula A3B5O12 and is of cubic crystal form and (iii) complex oxide that is represented by a chemical formula A4B2O9 and is of single crystal form; and does not contain Al2O3.SELECTED DRAWING: Figure 4
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Inventors:
Kohei Miya
Hideo Tange
Motoki Hotta
Takamichi Ogawa
Hideo Tange
Motoki Hotta
Takamichi Ogawa
Application Number:
JP2020012287A
Publication Date:
January 10, 2024
Filing Date:
January 29, 2020
Export Citation:
Assignee:
Nippon Special Ceramics Co., Ltd.
International Classes:
C04B37/00; H01L21/683
Domestic Patent References:
| JP2019026550A |
Foreign References:
| WO2018016419A1 | ||||
| WO2018016420A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation Alpha International Patent Office